The improvement of an mc-Si solar cell through reverse bias and high
Customer ServiceSurface morphology with superimposed reverse bias (-17V) electroluminescence from defects along grain boundaries of a multi-crystalline silicon solar cell.
Customer ServiceWe have identified at least five different local breakdown mechanisms according to the temperature coefficient (TC) and slope of their characteristics and electroluminescence (EL) under reverse bias.
Customer Servicetherefore generates a considerably reduced current, this cell may become reverse-biased by the other cells in the string by 13 V and beyond. If in this cell a large reverse current flows in one site, this site may heat up excessively (genera-tion of hot spots), which may lead to thermal destruction of the module. Therefore reverse currents in
Customer ServiceNowadays, multicrystalline silicon (mc-Si) grown by directional solidification (DS) method is one of the important substrate materials for solar cells, offering several advantages, such as low cost, high throughput, more straightforward operation, and better feedstock tolerance.
Customer Service3.1 Reverse current–voltage characteristic The reverse characteristic (total reverse current vs. applied bias voltage) of a typical cell is shown in Fig. 1 for four different temperatures. In the region of weak pre-breakdown (between zero and approx. –13 V bias), the total reverse current of the investigated mc Si solar cells
Customer ServiceNowadays, multicrystalline silicon (mc-Si) grown by directional solidification
Customer ServiceHigh Cell-To-Module ratio through precise cell conversion efficiency sorting. Classified efficiency grade by both minimum power and current. Excellent electrical long-term stability and reliability. Low breakage rate by using high-quality, stable wafers. 100% screened for reverse current and shunt resistance.
Customer ServiceRESULTS Current-voltage (I-V) characteristics Fig. 1 (a) shows typical reverse-bias I-V characteristics of our solar cells at two temperatures.
Customer ServiceThe spectral response, short-circuit photocurrent and conversion efficiency of a reverse cell made with multicrystalline silicon wafers have been computed taking into account different values of base thickness, grain size, grain boundary recombination velocity, front and back surface recombination velocities and minority carrier diffusion
Customer ServiceThe spectral response, short-circuit photocurrent and conversion efficiency of
Customer Serviceindustrial multicrystalline silicon solar cell, several different pre-breakdown mechanisms are present. Some of them are process-induced while others are related to the material quality. The breakdown is always localized within micrometer-sized spots, having the potential to develop high local power densities when the reverse current increases. However, the breakdown types
Customer ServiceNon-linear shunts like scratches and edge currents are the major source of the
Customer Service3.1 Reverse current–voltage characteristic The reverse characteristic (total reverse current vs.
Customer ServiceWe have identified at least five different local breakdown mechanisms according to the
Customer ServiceWe characterized strip-like shadows in cast multicrystalline silicon (mc-Si) ingots. Blocks and wafers were analyzed using scanning infrared microscopy, photoluminescence spectroscopy, laser scanning confocal microscopy, field-emission scanning electron microscopy, X-ray energy-dispersive spectrometry, and microwave photoconductivity decay technique. The effect on
Customer ServiceThe improvement of an mc-Si solar cell through reverse bias and high temperature (BT) aging was investigated using laser beam-induced current (LBIC) and electroluminescence (EL) techniques. We demonstrated that the dark current of the cell decreased with increasing aging time, which led to an increase in the maximum power after
Customer ServiceExtensive investigations on industrial multicrystalline silicon solar cells have shown that, for standard 1 X cm material, acid-etched texturization, and in absence of strong ohmic shunts, there are three different types of breakdown appearing in different reverse bias ranges.
Customer ServiceDark current density–voltage (J–V) curves of solar cells were measured in the forward and reverse directions using a DC power supply. The maximum current was 6A, which corresponds to a 3:8 10 2 A/cm2 current density. Between the cell and the DC power supply, a series resistor of 0.1 was inserted in order to measure the current from the
Customer ServiceExtensive investigations on industrial multicrystalline silicon solar cells have shown that, for
Customer ServiceWe investigated the breakdown behaviour of multicrystalline silicon solar cells. Three breakdown types are discerned: (i) Early pre-breakdown, (ii) soft breakdown related to recombination-active regions and (iii) hard avalanche breakdown at etched dislocations. We give a summary of their physical properties and their likely origin.
Customer ServiceBesides temperature-dependent current-voltage (I-V) characteristic measurements, mostly dark lock-in thermography (DLIT) under reverse biashas been used for localizing the breakdown sites.Since DLIT images can be scaled quantitatively in units of a local current density, the results ofDLIT images taken under different reverse
Customer ServiceNon-linear shunts like scratches and edge currents are the major source of the recombination current of industrial crystalline silicon solar cells. Moreover, the reverse current of such...
Customer Servicethe reverse-biased depletion region, where it can become locally increased by impact ionization. Since in this case the total cell current (originating from both the constant dark current and the pulsed photocurrent) cannot be used for the conversion of the LIT images into current density images, a value proportional to the current is obtained by
Customer ServiceWe investigated the breakdown behaviour of multicrystalline silicon solar cells. Three
Customer ServiceExtensive investigations on industrial multicrystalline silicon solar cells have shown that, for standard 1 Ωcm material, acid-etched texturization, and in absence of strong ohmic shunts, there
Customer ServiceSurface morphology with superimposed reverse bias (-17V) electroluminescence from defects
Customer ServiceDark saturation current density (a) and open circuit voltage (b) of a reverse multicrystalline cell (g = 2 mm, Sgb = 100 cm/s, SB = 100 cm/s, Ln = 250 ~tm) for various front surface recombination velocities: SF = 10 cm/s, 100 cm/s, 103 cm/s, 104 cm/s, 105 cm/s. J. Dugas / 3D modelling of a reuerse cell 83 E C3 o- n o 100 10 0.1 (a) SF = 105 cm/s / SF = 10
Customer ServiceLIT imaging allows to detect all kinds of reverse currents (ohmic and junction breakdown) quantitatively. The local current density is given by the local LIT signal divided by the applied bias. The basic constraint of LIT is its limited spatial resolution,
Customer ServiceIn order to further improve the quality of high efficiency multicrystalline silicon and the performance of multicrystalline silicon solar cells, we designed a compact nucleation layer on the crucible bottom for casting high performance multicrystalline silicon ingots.
1. Introduction Nowadays, multicrystalline silicon (mc-Si) grown by directional solidification (DS) method is one of the important substrate materials for solar cells, offering several advantages, such as low cost, high throughput, more straightforward operation, and better feedstock tolerance.
It has been demonstrated here that there are three clearly distinguishable breakdown mechanisms in multicrystalline solar cells: Early breakdown caused by Al-contamination (type 1), defect-induced breakdown caused by FeSi2or other precipitates lying in grain boundaries (type 2), and avalanche breakdown caused by etch pits (type 3).
If in this cell a large reverse current flows in one site, this site may heat up excessively (generation of hot spots), which may lead to thermal destruction of the module. Therefore reverse currents in solar cells are a serious reliability issue and their origin must be well understood. The most frequent and
In the region of weak pre- breakdown (between zero and approx. –13 V bias), the total reverse current of the investigated mc Si solar cells increases in magnitude with increasing temperature (positive TC), whereas in the hard pre-breakdown region (beyond approx. –13 V bias) the total reverse current decreases with rising temperature (negative TC).
Abstract:Extensive investigations on industrial multicrystalline silicon solar cells have shown that, for standard 1 Ωcm material, acid-etched texturization, and in absence of strong ohmic shunts, there are three different types of breakdown appearing in different reverse bias ranges.
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